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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-126 (SOT-32) Plastic Package
C42C2
C42C2
NPN PLASTIC POWER TRANSISTOR
Complementary C43C series General Purpose Applications
PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE
1
2 3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage (VBE =0) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 1 A; IB = 50 mA D.C. current gain IC = 200 mA; VCE = 1 V RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-emitter voltage (VBE =0) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (DC)
VCES VCEO IC Ptot Tj VCEsat hFE
max. max. max. max. max. max. min. max.
40 30 3 12.5 150
V V A W C
0.5 V 100 220
VCES VCEO VEBO IC
max. max. max. max.
40 30 5.0 3.0
V V V A
Continental Device India Limited
Data Sheet
Page 1 of 3
C42C2
Collector current (Peak)* Base current Total power dissipation up to T A = 25C Total power dissipation up to TC = 25C Junction temperature Storage temperature THERMAL RESISTANCE From junction to case From junction to ambient CHARACTERISTICS T c = 25C unless otherwise specified Collector cutoff current V BE = 0; VCE = Rated VCES Emitter cut-off current IC = 0; VEB = 5 V Breakdown sus. voltages IC = 100 mA; I B = 0 Saturation voltages IC = 1 A; IB = 50 mA IC = 1 A; I B = 100 mA D.C. current gain IC = 200 mA; VCE = 1 V IC = 2 A; V CE = 1 V Transition frequency IC = 20 mA; V CE = 4 V Collector capacitance V CB = 10 V; I E = 0; f = 1 MHz Switching time Delay time + Rise time IC = 1 A; I B1 = IB2 = 0.1 A Storage time + Fall time V CC = 30 V; tp = 25 sec
ICM IB Ptot Ptot Tj Tstg Rth j-c Rth j-a
max. 5A max. 2A max. 2.1 W max. 12.5 W max. 150 C -65 to +150 C = = 10 C/W 60 C/W
ICES IEBO VCEO(sus)* VCEsat* VBEsat* hFE* hFE* fT Ccbo
max. max. min. max. max. min. max. min. typ. max.
10 A 100 A 30 V 0.5 V 1.3 V 100 220 20 50 MHz 100 pF
td+tr
typ.
100 ns
ts tf
typ. typ.
500 ns 75 ns
* Pulsed test: P W = 300 ms; duty cycle = 2%.
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com
Continental Device India Limited Data Sheet Page 3 of 3
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